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PD84010STR-E Datenblatt(PDF) 7 Page - STMicroelectronics

Teilenummer PD84010STR-E
Bauteilbeschribung  RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs
PDF  14 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD84010STR-E Datenblatt(HTML) 7 Page - STMicroelectronics

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PD84010-E, PD84010S-E
Typical performance
7/14
Figure 7.
Pout & Id vs VGS
Figure 8.
Pout & Id vs supply voltage
Figure 9.
Pout & id vs supply voltage
Figure 10.
Pout & id vs supply voltage
Figure 11.
Gain vs Pout & Bias current
Figure 12.
Gain & efficiency vs Pout
0
2
4
6
8
10
12
14
012
3
4
56
Vgs (V)
0
0.5
1
1.5
2
2.5
3
3.5
Pout
Id
Freq = 870 MHz
Vdd = 7.5V
Pin = 200mW
0
2
4
6
8
10
12
4
5
6
7
8
9
10
11
12
13
14
Vdd (V)
0
0.5
1
1.5
2
2.5
3
Pout
Id
Freq = 870 MHz
Idq = 300mA
Pin = 200mW
0
2
4
6
8
10
12
14
16
18
20
4
5
6
7
8
9
10
11
12
13
14
Vdd (V)
0
0.5
1
1.5
2
2.5
Pout
Id
Freq = 870 MHz
Idq = 300mA
Pin = 400mW
0
4
8
12
16
20
24
28
32
4567
8
9
10
11
12
13
14
Vdd (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
Pout
Id
Freq = 870 MHz
Idq = 300mA
Pin = 800mW
6
8
10
12
14
16
18
20
22
02
46
8
10
12
14
16
Pout (W)
Idq = 100mA
Idq = 300mA
Idq = 500mA
Freq = 870 MHz
Vdd = 13.6V
7.5
6
8
10
12
14
16
18
20
22
02
46
8
10
12
14
Pout (W)
0
10
20
30
40
50
60
70
80
Gain
Eff
Freq = 870 MHz
Vdd = 13.6V
Idq = 300mA
7.5



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