PD84010STR-E datasheet(4/14 Pages) STMICROELECTRONICS

Teilenummer	PD84010STR-E

Bauteilbeschribung	RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

PDF	14 Pages

Scroll/Zoom	100%

Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 14 page

Electrical characteristics

PD84010-E, PD84010S-E

4/14

Electrical characteristics

TCASE = +25

2.1

Static

2.2

Dynamic

2.3

ESD protection characteristics

2.4

Moisture sensitivity level

Table 4.

Static

Symbol

Test conditions

Min

Typ

Max

Unit

IDSS

VGS = 0V

VDS = 25V

µA

IGSS

VGS = 5V

VDS = 0V

µA

VGS(Q)

VDS = 10V

ID = TBDmA

TBD

VDS(ON)

VGS = 10V

ID = 3A

0.64

0.7

CISS

VGS = 0V

VDS = 7V

f = 1MHz

COSS

VGS = 0V

VDS = 7V

f = 1MHz

CRSS

VGS = 0V

VDS = 7V

f = 1MHz

2.3

Table 5.

Dynamic

Symbol

Test conditions

Min.

Typ.

Max.

Unit

P3dB

VDD = 7.5V, IDQ = 300mA

f = 870MHz

VDD = 7.5V, IDQ = 300mA, POUT = 2W, f = 870MHz

16.3

VDD = 7.5V, IDQ = 300mA, POUT = P3dB, f = 870MHz

Load

mismatch

VDD = 9.5V, IDQ = 300mA, POUT = 20W, f = 870MHz

All phase angles

20:1

VSWR

Table 6.

ESD protection characteristics

Test conditions

Class

Human body model

Machine model

Table 7.

Moisture sensitivity level

Test methodology

Rating

J-STD-020B

MSL 3

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