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PD85015STR-E Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer PD85015STR-E
Bauteilbeschribung  RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
PDF  13 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD85015STR-E Datenblatt(HTML) 1 Page - STMicroelectronics

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July 2009
Doc ID 14466 Rev 2
1/13
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PD85015-E
PD85015S-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 15 W with 16 dB
gain @ 870 MHz / 13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
Description
The PD85015-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. PD85015-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD85015-E’s superior linearity performance
makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf (search for AN1294)
Figure 1.
Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
Table 1.
Device summary
Order codes
Package
Packaging
PD85015-E
PowerSO-10RF (formed lead)
Tube
PD85015S-E
PowerSO-10RF (straight lead)
Tube
PD85015TR-E
PowerSO-10RF (formed lead)
Tape and reel
PD85015STR-E
PowerSO-10RF (straight lead)
Tape and reel
www.st.com


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