R8C datasheet(35/50 Pages) RENESAS

35 / 50 page

REJ03B0320-0010 Rev.0.10

Page 35 of 47

Jul 12, 2010

R8C/3JT Group

5. Electrical Characteristics

Under development Preliminary document

Specifications in this document are tentative and subject to change.

Note:

1. 4.2 V

≤ Vcc ≤ 5.5 V at Topr = −20°C to 85°C (N version)/−40°C to 85°C (D version), f(XIN) = 20 MHz, unless otherwise

specified.

Table 5.13

Electrical Characteristics (1) [4.2 V

≤ Vcc ≤ 5.5 V]

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

VOH

Output “H”

voltage

Other than XOUT

Drive capacity High Vcc = 5 V IOH =

−20 mA

Vcc

− 2.0

—

Vcc

Drive capacity Low Vcc = 5 V IOH =

−5 mA

Vcc

− 2.0

—

Vcc

XOUT

Vcc = 5 V

IOH =

−200 µA1.0

—

Vcc

VOL

Output “L”

voltage

Other than XOUT

Drive capacity High Vcc = 5 V IOL = 20 mA

—

2.0

Drive capacity Low Vcc = 5 V IOL = 5 mA

—

2.0

XOUT

Vcc = 5 V

IOL = 200

µA—

—

0.5

VT+-VT-

Hysteresis

INT0, INT1,

INT2, INT3,

KI0, KI1, KI2, KI3,

TRAIO, TRBO,

TRCIOA, TRCIOB,

TRCIOC, TRCIOD,

TRCTRG, TRCCLK,

ADTRG,

RXD0, RXD2, CLK0,

CLK2, SCL2, SDA2

0.1

1.2

—

RESET

0.1

1.2

—

IIH

Input “H” current

VI = 5 V, Vcc = 5.0 V

—

5.0

µA

IIL

Input “L” current

VI = 0 V, Vcc = 5.0 V

—

−5.0

µA

RPULLUP

Pull-up resistance

VI = 0 V, Vcc = 5.0 V

100

Ω

RfXIN

Feedback

resistance

XIN

—

0.3

—

Ω

VRAM

RAM hold voltage

During stop mode

1.8

—

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