PD54003STR-E datasheet(1/27 Pages) STMICROELECTRONICS

Teilenummer	PD54003STR-E

Bauteilbeschribung	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PDF	27 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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May 2010

Doc ID 12235 Rev 2

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PD54003-E

PD54003S-E

RF POWER transistor, LdmoST plastic family

N-channel enhancement-mode, lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 3 W with 12dB gain @ 500 MHz

■ New RF plastic package

Description

The device is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broadband

commercial and industrial applications. It

operates at 7 V in common source mode at

frequencies of up to 1 GHz. The device features

the excellent gain, linearity and reliability of ST’s

latest LDMOS technology, the PowerSO-10RF.

The superior linearity performance makes it an

ideal solution for portable radios. The PowerSO-

10RF is the first true surface-mount device (SMD)

plastic RF power package. It is based on the

highly reliable PowerSO-10, the first ST-

originated, JEDEC-approved, high-power SMD

package. It has been optimized specifically for RF

requirements, and offers excellent RF

performance as well as ease of assembly.

surface-mount recommendations are available in

application note AN1294 (see www.st.com/rf).

Figure 1.

Pin connection

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Gate

Source

Drain

Table 1.

Device summary

Order code

Package

Packing

PD54003-E

PowerSO-10RF (formed lead)

Tube

PD54003S-E

PowerSO-10RF (straight lead)

Tube

PD54003TR-E

PowerSO-10RF (formed lead)

Tape and reel

PD54003STR-E

PowerSO-10RF (straight lead)

Tape and reel

www.st.com

Ähnliche Beschreibung - PD54003STR-E

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