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PD54008STR-E Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer PD54008STR-E
Bauteilbeschribung  RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
PDF  29 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD54008STR-E Datenblatt(HTML) 1 Page - STMicroelectronics

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May 2010
Doc ID 12271 Rev 2
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PD54008-E
PD54008S-E
RF POWER transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V
■ New RF plastic package
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 7 V in common source mode at
frequencies of up to 1 GHz. The device boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
Device’s superior linearity performance makes it
an ideal solution for portable radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note
AN1294).
Figure 1.
Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
Table 1.
Device summary
Order code
Package
Packing
PD54008-E-E
PowerSO-10RF (formed lead)
Tube
PD54008S-E-E
PowerSO-10RF (straight lead)
Tube
PD54008TR-E
PowerSO-10RF (formed lead)
Tape and reel
PD54008STR-E
PowerSO-10RF (straight lead)
Tape and reel
www.st.com


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