H30R100 datasheet(6/12 Pages) INFINEON

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IHW30N100R

Soft Switching Series

Power Semiconductors

Rev. 2.2 Nov 08

10A

20A

30A

40A

50A

100ns

1000ns

d(off)

20Ω

30Ω

40Ω

10ns

100ns

1000ns

d(off)

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE = 600V, VGE = 0/15V, RG=26Ω,

Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ = 175°C,

VCE= 600V, VGE = 0/15V, IC = 30A,

Dynamic test circuit in Figure E)

25°C

50°C

75°C

100°C

125°C

150°C

100ns

1000ns

d(off)

-50°C

0°C

50°C

100°C

max.

typ.

min.

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 600V,

VGE = 0/15V, IC = 30A, RG=26Ω,

Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.7mA)

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