H30R100 datasheet(8/12 Pages) INFINEON

8 / 12 page

IHW30N100R

Soft Switching Series

Power Semiconductors

Rev. 2.2 Nov 08

0nC

50nC

100nC

150nC

200nC

250nC

10V

15V

800V

200V

10V

20V

30V

40V

10pF

100pF

1nF

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oss

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QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(IC=30 A)

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

1µs

10µs 100µs

1ms

10ms 100ms

-2K/W

-1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

=0.5

1µs

10µs 100µs

1ms

10ms 100ms

-2K/W

-1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

=0.5

tP, PULSE WIDTH

Figure 19. IGBT transient thermal resistance

(D = tp / T)

Figure 20. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

,(K/W)

τ , (s )

0.1586

7.03*10

-2

0.0987

6.76*10

-3

0.0807

6.53*10

-4

0.026

8.22*10

-5

C1=τ1/R1

C2=τ2/R2

,(K/W)

τ , (s )

0.1586

7.03*10

-2

0.0987

6.76*10

-3

0.0807

6.53*10

-4

0.026

8.22*10

-5

C1=τ1/R1

C2=τ2/R2

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