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2SK2751L-AL3-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 2SK2751L-AL3-R
Bauteilbeschribung  N-CHANNEL JUNCTION FET
PDF  4 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SK2751L-AL3-R Datenblatt(HTML) 2 Page - Unisonic Technologies

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2SK2751
N-CHANNEL JFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-067.C
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Drain Voltage
VGDS
-40
V
Drain Current
ID
10
mA
Gate Current
IG
2
mA
Allowable Power Dissipation
PD
200
mW
Channel Temperature
TCH
+150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25±3℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Gate-Drain Voltage
VGDS
IG=-100µA, VDS=0
-40
V
Gate-Source Cut-Off Voltage
VGSC
VDS=10V, ID=1µA
-3.5
V
Drain-Source Cut-Off Current
IDSS
VDS=10V, VGS=0
1.4
4.7
mA
Gate-Source Leakage Current
IGSS
VGS=-20V, VDS=0
-1
nA
Forward Transfer Admittance
| Yfs |
VDS=10V, VGS=0, f=1kHz
2.5
mS
Input Capacitance (Common Source)
CISS
5
pF
Output Capacitance (Common Source)
COSS
1
pF
Reverse Transfer Capacitance
(Common Source)
CRSS
VDS=10V, VGS=0, f=1MHz
1
pF



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