IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN210N20P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

60

103

S

C

iss

18.6

nF

C

oss

V

GS

= 0V, V

3270

pF

C

rss

80

pF

t

d(on)

43

ns

t

r

30

ns

t

d(off)

70

ns

t

f

18

ns

Q

g(on)

255

nC

Q

gs

V

94

nC

Q

gd

83

nC

R

thJC

0.14

°C/W

R

thCS

0.05

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

210

A

I

SM

Repetitive, Pulse Width Limited by T

JM

800

A

V

SD

I

1.3

V

t

rr

200

ns

Q

RM

1.34

μC

I

RM

18

A

Note

1: Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Resistive Switching Times

V

R

I

V

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)