IXFK520N075T2 datasheet(1/6 Pages) IXYS

Teilenummer	IXFK520N075T2

Bauteilbeschribung	TrenchT2 GigaMOS HiperFET Power MOSFET

PDF	6 Pages

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Hersteller	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 175°C75

V

DGR

T

J

= 25

°C to 175°C, R

GS = 1MΩ

75

V

GSS

Continuous

± 20

V

GSM

Transient

± 30

V

I

D25

T

C = 25°C (Chip Capability)

520

A

I

L(RMS)

External Lead Current Limit

160

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

1350

A

I

A

T

C = 25°C

200

A

E

AS

T

C = 25°C3

J

P

D

T

C = 25°C

1250

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +175

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-264)

1.13/10

Nm/lb.in.

F

C

Mounting Force

(PLUS247)

20..120 /4.5..27

N/lb.

Weight

TO-264

10

g

PLUS247

6

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

75

V

GS(th)

V

DS = VGS, ID = 8mA

2.5

5.0

V

I

GSS

V

GS = ± 20V, VDS = 0V

± 200 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

μA

T

J = 150°C

2 mA

R

DS(on)

V

GS = 10V, ID = 100A, Notes 1 & 2

2.2 m

Ω

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFK520N075T2

IXFX520N075T2

V

DSS

= 75V

I

D25

= 520A

R

DS(on) ≤

≤≤≤≤ 2.2m

Ω

DS100211(11/09)

Features

International Standard Packages

High Current Handling Capability

Fast Intrinsic Diode

Avalanche Rated

Low R

DS(on)

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

DC-DC Converters and Off-Line UPS

Primary-Side Switch

High Speed Power Switching

Applications

TrenchT2TM GigaMOSTM

HiperFETTM

Power MOSFET

Advance Technical Information

G = Gate

D

= Drain

S = Source

Tab = Drain

PLUS247 (IXFX)

TO-264 (IXFK)

S

G

D

Tab

G

S

D

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