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IXFK520N075T2 Datenblatt(PDF) 5 Page - IXYS Corporation

Teilenummer IXFK520N075T2
Bauteilbeschribung  TrenchT2 GigaMOS HiperFET Power MOSFET
PDF  6 Pages
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Hersteller  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFK520N075T2 Datenblatt(HTML) 5 Page - IXYS Corporation

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© 2009 IXYS CORPORATION, All Rights Reserved
IXFK520N075T2
IXFX520N075T2
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
0
20
40
60
80
100
120
140
160
180
40
60
80
100
120
140
160
180
200
ID - Amperes
TJ = 25ºC
TJ = 125ºC
RG = 1Ω , VGS = 10V
VDS = 37.5V
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
100
200
300
400
500
600
12
345
6
789
10
RG - Ohms
0
40
80
120
160
200
240
t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 37.5V
I D = 100A
I D = 200A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
30
32
34
36
38
40
42
44
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
70
80
90
100
110
120
130
140
t f
td(off) - - - -
RG = 1Ω, VGS = 10V
VDS = 37.5V
I D = 200A
I D = 100A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
32
34
36
38
40
42
44
46
40
60
80
100
120
140
160
180
200
ID - Amperes
40
60
80
100
120
140
160
180
t f
td(off) - - - -
RG = 1Ω, VGS = 10V
VDS = 37.5V
TJ = 25ºC
TJ = 125ºC
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
0
20
40
60
80
100
120
140
160
180
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG = 1Ω , VGS = 10V
VDS = 37.5V
I D = 200A
I D = 100A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
100
200
300
400
500
600
1
234
5
678
9
10
RG - Ohms
0
100
200
300
400
500
600
t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 37.5V
I D = 200A, 100A



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