TLE4953C datasheet(16/20 Pages) INFINEON

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TLE4953

TLE4953C

Data Sheet

V 4.0, 2010-04

Electro Magnetic Compatibility (values depend on

M!)

Characterization of Electro Magnetic Compatibility are carried out on sample base of one

qualification lot. Not all specification parameters have been monitored during EMC

exposure. Only key parameters as e.g. switching current have been monitored

Parameter

Symbol

Level/Typ

Status

Ref. ISO 7637-1; test circuit 1;

∆B = 2 mT (amplitude of sinus signal); V

CC = 13.5 V, fB = 100 Hz; T = 25 °C; RM ≥ 75 Ω

Testpulse 1

Testpulse 2

Testpulse 3a

Testpulse 3b

Testpulse 4

Testpulse 5

EMC

IV / – 100 V

IV / 100 V

IV / – 150 V

IV / 100 V

IV / – 7 V

IV / 86.53) V

C1)

B2)

1) According to 7637-1 the supply switched "OFF" for

t = 200 ms.

2) According to 7637-1 for test pulse 4 the test voltage shall be 12 V ± 0.2 V. Measured with RM =75Ω only.

Mainly the current consumption will decrease. Status C with test circuit 1.

3) Applying in the board net a suppressor diode with sufficient energy absorption capability.

Ref. ISO 7637-3; test circuit 1;

∆B = 2 mT (amplitude of sinus signal); V

CC = 13.5 V, fB = 100 Hz; T = 25 °C; RM ≥ 75 Ω

Testpulse 1

Testpulse 2

Testpulse 3a

Testpulse 3b

EMC

IV / – 30 V

IV / 30 V

IV / – 60 V

IV / 40 V

Ref. ISO 11452-3; test circuit 1; measured in TEM-cell

∆B = 2 mT; V

CC = 13.5 V, fB = 100 Hz; T= 25 °C

EMC field strength

(TLE4953)

ETEM-Cell

IV / 200 V/m

AM = 80%,

f = 1 kHz

EMC field strength

(TLE4953C)

ETEM-Cell

IV / 250 V/m

AM = 80%,

f = 1 kHz

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