The VRF157FL is a gold-metallized silicon n-channel RF power transis-

tor designed for broadband commercial and military applications requiring

high power and gain without compromising reliability, ruggedness, or inter-

modulation distortion.

FEATURES

• Improved Ruggedness V

• 600W with 21dB Typical Gain @ 30MHz, 50V

• Excellent Stability & Low IMD

• Common Source Configuration

• Available in Matched Pairs

• Nitride Passivated

• Economical Flangeless Package

• Refractory Gold Metallization

• High Voltage Replacement for MRF157

• RoHS Compliant

Symbol

Parameter

VRF157FL(MP)

Unit

V

DSS

Drain-Source Voltage

170

V

I

D

Continuous Drain Current @ T

60

A

V

GS

Gate-Source Voltage

±40

V

P

D

Total Device dissipation @ T

1350

W

T

STG

Storage Temperature Range

-65 to 150

°C

T

J

Operating Junction Temperature Max

200

RF POWER VERTICAL MOSFET

Maximum Ratings

All Ratings: T

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

V

(BR)DSS

Drain-Source Breakdown Voltage (V

170

180

V

V

DS(ON)

On State Drain Voltage (I

3.0

5.0

I

DSS

Zero Gate Voltage Drain Current (V

4.0

mA

I

GSS

Gate-Source Leakage Current (V

4.0

μA

g

fs

Forward Transconductance (V

16

mhos

V

GS(TH)

Gate Threshold Voltage (V

2.9

3.6

4.4

V

Microsemi Website - http://www.microsemi.com

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

D

G

S

S

Thermal Characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

R

Junction to Case Thermal Resistance

0.13

°C/W

R

Surface.)

0.22

VRF157FL

VRF157FLMP

50V, 600W, 80MHz