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SC1186CSW Datenblatt(PDF) 3 Page - Semtech Corporation

Teilenummer SC1186CSW
Bauteilbeschribung  PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
PDF  12 Pages
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Hersteller  SEMTECH [Semtech Corporation]
Direct Link  http://www.semtech.com
Logo SEMTECH - Semtech Corporation

SC1186CSW Datenblatt(HTML) 3 Page - Semtech Corporation

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PROGRAMMABLE SYNCHRONOUS DC/DC
CONVERTER, DUAL LOW DROPOUT
REGULATOR CONTROLLER
© 1999 SEMTECH CORP.
PRELIMINARY - December 2, 1999
652 MITCHELL ROAD NEWBURY PARK CA 91320
SC1186
3
AGND
GATE1
LDOS1
LDOS2
VCC
REF
LDOEN
CS-
CS+
PGNDH
DH
PGNDL
1
2
3
LDOV
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VOSENSE
EN
BSTH
BSTL
DL
VID0
VID1
VID2
VID3
VID4
GATE2
Top View
(24 Pin SOIC)
Note:
(1) All logic level inputs and outputs are open
collector TTL compatible.
PIN DESCRIPTION
Pin
Pin Name
Pin Function
1
AGND
Small Signal Analog and Digital Ground
2
GATE1
Gate Drive Output LDO1
3
LDOS1
Sense Input for LDO1
4
LDOS2
Sense Input for LDO2
5
VCC
Input Voltage
6
REF
Buffered Reference Voltage output
7
LDOEN
LDO Supply Monitor.
8
CS-
Current Sense Input (negative)
9
CS+
Current Sense Input (positive)
10
PGNDH
Power Ground for High Side Switch
11
DH
High Side Driver Output
12
PGNDL
Power Ground for Low Side Switch
13
DL
Low Side Driver Output
14
BSTL
Supply for Low Side Driver
15
BSTH
Supply for High Side Driver
16
EN
(1)
Logic low shuts down the converter;
High or open for normal operation.
17
VOSENSE
Top end of internal feedback chain
18
VID4
(1)
Programming Input (MSB)
19
VID3
(1)
Programming Input
20
VID2
(1)
Programming Input
21
VID1
(1)
Programming Input
22
VID0
(1)
Programming Input (LSB)
23
LDOV
+12V for LDO section
24
GATE2
Gate Drive Output LDO2
ELECTRICAL CHARACTERISTICS (Cont.)
Unless specified: V
CC = 4.75V to 5.25V; GND = PGND = 0V; VOSENSE = VO; 0mV < (CS+-CS-) < 60mV; LDOV = 11.4V to 12.6V; TA = 0 to 70°C
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
LDOV Undervoltage Lockout
6.5
8.0
10
V
LDOEN Threshold
1.3
1.9
V
LDOEN Sink Current
LDOEN = 3.3V
LDOEN = 0V
0.01
-200
1.0
-300
µA
µA
Overcurrent Trip Voltage
% of Vo set point
20
40
60
%
Power-up Output Short Circuit Immunity
1
5
60
ms
Output Short Circuit Glitch Immunity
0.5
4
6
ms
Gate Pulldown Impedance
GATE(1,2)-AGND;VCC=BST=0V
80
300
750
k
Ω
VOSENSE Impedance
10
k
Ω



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