For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

7

7 - 1

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 2 - 12 GHz

v01.0709

General Description

Features

Functional Diagram

Noise figure: 1.8 dB

Gain: 15 dB

output ip3: +25 dBm

p1dB output power: +13 dBm

50 ohm matched input/output

supply Voltage: +4V @ 45 mA

24 lead Ceramic 4x4mm smT package: 16mm²

Electrical Specifications

Typical Applications

This HmC772lC4 is ideal for:

• wideband Communication systems

• surveillance systems

• point-to-point radios

• point-to-multi-point radios

• military & space

• Test instrumentation

The HmC772lC4 is a GaAs mmiC HemT low Noise

wideband Amplifier which operates between 2 and

12 GHz. The amplifier provides 15 dB of gain, 1.8 dB

noise figure up to 12 GHz and output ip3 of +25 dBm,

while requiring only 45 mA from a +4V supply voltage.

The psat output power of up to +15 dBm enables the

lNA to function as a lo driver for many of Hittite’s

balanced, i/Q or image reject mixers. The HmC772lC4

also features i/os that are DC blocked and internally

matched to 50 ohms, making it ideal for smT based

high capacity microwave radio applications. The

HmC772lC4 is housed in a roHs compliant 4x4 mm

QfN leadless ceramic package.

HMC772LC4

parameter

min.

Typ.

max.

Units

frequency range

2 - 12

GHz

Gain

14

15

dB

Gain Variation over Temperature

0.01

dB / °C

Noise figure

1.8

2.5

dB

input return loss

15

dB

output return loss

15

dB

output power for 1 dB Compression

13

dBm

output Third order intercept (ip3)

25

dBm

supply Current (idd) (Vdd = 4V, Vgg = -0.2V Typ.)*

45

mA

* Adjust Vgg between -1 to 0.3V to achieve idd = 45mA typical.