2SB828 datasheet(2/2 Pages) ISC

Teilenummer	2SB828

Bauteilbeschribung	isc Silicon PNP Power Transistor

PDF	2 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB828

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -1mA ; RBE= ∞

-50

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA ; IE= 0

-60

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -1mA ; IC= 0

-6

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -6A; IB= -0.3A

-0.5

ICBO

Collector Cutoff Current

VCB= -40V; IE= 0

-0.1

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

-0.1

hFE-1

DC Current Gain

IC= -1A; VCE= -2V

280

hFE-2

DC Current Gain

IC= -5A; VCE= -2V

Current-Gain—Bandwidth Product

IC= -1A; VCE= -5V

MHz

Switching times

ton

Turn-on Time

0.2

μs

tstg

Storage Time

0.4

μs

Fall Time

RL= 4Ω, VCC= -20V

IC= -5A; IB1= -IB2= -0.5A

0.1

μs

hFE-1 Classifications

70-140

100-200

140-280

isc Website：www.iscsemi.cn

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