2SB828 datasheet(1/2 Pages) ISC

Teilenummer	2SB828

Bauteilbeschribung	isc Silicon PNP Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB828

DESCRIPTION

·High Collector Current:: IC= -12A

·Low Collector Saturation Voltage

: VCE(sat)= -0.5V(Max)@IC= -6A

·Wide Area of Safe Operation

·Complement to Type 2SD1064

APPLICATIONS

·Designed for relay drivers,high-speed inverters,converters,

and other gereral high-current switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-12

A

ICM

Collector Current-Peak

-17

A

PC

Total Power Dissipation

@ TC=25℃

80

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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