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2SD634 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SD634
Bauteilbeschribung  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD634 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD634
DESCRIPTION
·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A
·Low Saturation Voltage
: VCE(sat)= 1.5V(Max.)@ IC= 3.0A
·Complement to Type 2SB674
APPLICATIONS
·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
B
Base Current-Continuous
0.2
A
PC
Collector Power Dissipation
@ TC=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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