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2SD684 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SD684
Bauteilbeschribung  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD684 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD684
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min)
·High DC Current Gain-
: hFE= 1500(Min.)@IC= 2A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 4A
APPLICATIONS
·Igniter applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
B
Base Current-Continuous
1
A
PC
Collector Power Dissipation
@ TC=25℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
isc Website：www.iscsemi.cn


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