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BU921P Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BU921P
Bauteilbeschribung  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU921P Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BU921P
DESCRIPTION
·High Voltage
·DARLINGTON
APPLICATIONS
·Designed for automotive ignition applications and inverter
circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage VBE= 0
450
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
10
A
ICM
Collector Current-peak
15
A
IB
B
Base Current
5
A
PC
Collector Power Dissipation
@TC=25℃
105
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.2
℃/W
isc Website：www.iscsemi.cn


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