BUX21 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUX21

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A; IB= 0

200

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 12A; IB= 1.2A

0.6

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 25A ;IB= 3A

1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= 25A ;IB= 3A

1.5

ICEO

Collector Cutoff Current

VCE= 160V; IB= 0

3.0

ICEX

Collector Cutoff Current

VCE= 250V;VBE= -1.5V

VCE= 250V;VBE= -1.5V;TC=125℃

3.0

12.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

hFE-1

DC Current Gain

IC= 12A ; VCE= 2V

hFE-2

DC Current Gain

IC= 25A ; VCE= 4V

Current-Gain—Bandwidth Product

IC= 2A; VCE= 15V, ftest= 10MHz

MHz

Switching Times

ton

Turn-on Time

IC= 25A ;IB1= 3A; VCC= 100V

1.2

μs

Storage Time

1.8

μs

Fall Time

IC= 25A ;IB1= -IB2= 3A;VCC= 100V

0.4

μs

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