| Datenblatt-Suchmaschine für elektronische Bauteile |
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BUX21 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUX21 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX21 DESCRIPTION ·Low Collector Saturation Voltage- ·High Switching Speed ·High Current Current Capability APPLICATIONS ·Desinged for use in switching and linear applications in military and industrial equipment. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEX Collector-Emitter Voltage VBE= -1.5V 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A ICM Collector Current-Peak 50 A IB B Base Current-Continuous 8 A PC Collector Power Dissipation @TC=25℃ 350 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.5 ℃/W isc Website:www.iscsemi.cn |
Ähnliche Teilenummer - BUX21 |
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Ähnliche Beschreibung - BUX21 |
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