RJH30H2DPK-M0 datasheet(2/7 Pages) RENESAS

2 / 7 page

RJH30H2DPK-M0

Preliminary

R07DS0464EJ0200 Rev.2.00

Page 2 of 6

Jun 15, 2011

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero gate voltage collector current

ICES

—

A

VCE = 360 V, VGE = 0

Gate to emitter leak current

IGES

—

±100

VGE = ± 30 V, VCE = 0

Gate to emitter cutoff voltage

VGE(off)

2.5

—

VCE = 10 V, IC = 1 mA

Collector to emitter saturation voltage

VCE(sat)

—

1.4

1.9

IC = 35 A, VGE = 15 V

Note3

Input capacitance

Cies

—

1200

—

Output capacitance

Coes

—

Reveres transfer capacitance

Cres

—

VCE = 25 V

VGE = 0

f = 1 MHz

Total gate charge

—

Gate to emitter charge

Qge

—

Gate to collector charge

Qgc

—

VGE = 15 V

VCE = 150 V

IC = 35 A

td(on)

—

0.02

—

s

—

0.1

—

s

td(off)

—

0.06

—

s

Switching time

—

0.18

—

s

IC = 35 A

RL = 4.5 

VGE = 15 V

RG = 5 

FRD forward voltage

—

1.4

1.7

IF = 20 A

Note3

FRD reverse recovery time

trr

—

IF = 20 A

diF/dt = 100 A/s

Notes: 3. Pulse test.

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