MJD210G-TN3-R datasheet(1/5 Pages) UTC

Teilenummer	MJD210G-TN3-R

Bauteilbeschribung	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

PDF	5 Pages

Scroll/Zoom	100%

Hersteller	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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1 / 5 page

UNISONIC TECHNOLOGIES CO., LTD

MJD210

PNP SILICON TRANSISTOR

www.unisonic.com.tw

1 of 5

QW-R213-001.C

PNP SILICON DPAK FOR

SURFACE MOUNT

APPLICATIONS

DESCRIPTION

The UTC MJD210 is designed for low voltage, low-power,

high-gain audio amplifier applications.

FEATURE

*Collector-Emitter Sustaining Voltage

VCEO(SUS) =-25V (Min) @ IC =-10mA

*High DC Current Gain

hFE =70 (Min) @ IC=-500mA

=45 (Min) @ IC=-2A

=10 (Min) @ IC=-5A

*Lead Formed for Surface Mount Applications in

Plastic Sleeves (No Suffix)

*Straight Lead Version in Plastic Sleeves (“-1” Suffix)

*Lead Formed Version in 16mm Tape and Reel

(“T4” Suffix)

*Low Collector – Emitter Saturation Voltage

VCE(SAT) = -0.3V (Max) @ IC =-500mA

= -0.75V (Max) @ IC = -2.0 A

*High Current-Gain-Bandwidth Product

fT = 65 MHz (Min) @ IC = -100 mA

*Annular Construction for Low Leakage

ICBO = -100 nA @ Rated VCB

TO-252

1

TO-251

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free Plating

Halogen Free

Package

1

2

3

Packing

MJD210L-TM3-T

MJD210G-TM3-T

TO-251

B

C

E

Tube

MJD210L-TN3-T

MJD210G-TN3-T

TO-252

B

C

E

Tube

MJD210L-TN3-R

MJD210G-TN3-R

TO-252

B

C

E

Tape Reel

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