| Datenblatt-Suchmaschine für elektronische Bauteile |
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THS8200IPFPEP Datenblatt(PDF) 91 Page - Texas Instruments |
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THS8200IPFPEP Datenblatt(HTML) 91 Page - Texas Instruments |
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91 / 104 page ![]() f - Frequency - MHz 0 100 200 300 400 500 V = 700 mV VIO = 3.3 V V(BIAS) = 350 mV 20 DLL Bypassed DLL Used 30 80 160 200 THS8200-EP www.ti.com SLES253 – DECEMBER 2009 ELECTRICAL CHARACTERISTICS (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT DAC output current tfi 10 to 90% of full-scale, CLK = 80 MHz 3.5 4.2 ns fall time Analog output Measured from falling edge of CLKIN to 50% td 6.5 ns delay of full-scale transition(9) Analog output Measured from 50% of full scale transition on output to output tsa 6.6 ns settling time settling, within 2%(10) 1 MHz, −1 dB FS digital sine input –55 Spurious-free SFDR dB dynamic range 10 MHz, −1 dB FS digital sine input –43 BW Bandwidth (3 dB) 90 MHz Eglitch Glitch energy Full-scale code transition at 205 MSPS 25 pVs (9) This value excludes the digital process delay, tD(D). Limit from characterization only. Data is clocked in on the rising edge of CLKIN. Analog outputs become available on the falling edge of CLKIN. (10) Limit from characterization only. 7.4 Power Requirements 7.4.1 Power for 700-mV DAC Output Compliance + 350-mV Bias at AVDD = 3.3 V, DVDD = 1.8 V, VDD_IO = 3.3 V, VDD_DLL = 3.3 V, 1-MHz Tone on All Channels POWER (mW), POWER (mW), f (MHz) IAVDD (mA) IDVDD (mA) IVDD_IO (mA) IVDD_DLL (mA) DLL BYPASSED DLL USED 20 329.91 332.88 93.2 10.4 1.1 0.9 30 338.52 351.72 93.2 15 1.2 4 80 382.47 399.63 93.2 38.5 1.7 5.2 160 450.51 93.2 75.2 2.3 200 476.01 93.2 89 2.5 Figure 7-1. POWER vs FREQUENCY 7.4.2 Power for 700-mV DAC Output Compliance + 350-mV Bias at AVDD = 3.3 V, Copyright © 2009, Texas Instruments Incorporated Electrical Characteristics 91 Submit Documentation Feedback Product Folder Link(s): THS8200-EP |
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