DTC124EM3 datasheet(1/12 Pages) ONSEMI

Teilenummer	DTC124EM3

Bauteilbeschribung	Digital Transistors (BRT) R1 = 22 k, R2 = 22 k

PDF	12 Pages

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Hersteller	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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1 / 12 page

August, 2012 − Rev. 0

1

Publication Order Number:

DTC124E/D

MUN2212, MMUN2212L,

MUN5212, DTC124EE,

DTC124EM3, NSBC124EF3

Digital Transistors (BRT)

R1 = 22 kW, R2 = 22 kW

NPN Transistors with Monolithic Bias

Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector−Base Voltage

VCBO

50

Vdc

Collector−Emitter Voltage

VCEO

50

Vdc

Collector Current − Continuous

IC

100

mAdc

Input Forward Voltage

VIN(fwd)

40

Vdc

Input Reverse Voltage

VIN(rev)

10

Vdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

PIN 1

BASE

(INPUT)

R1

R2

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

SC−75

CASE 463

STYLE 1

MARKING DIAGRAMS

XXX

= Specific Device Code

M

= Date Code*

G

=Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

SC−59

CASE 318D

STYLE 1

SOT−23

CASE 318

STYLE 6

SC−70/SOT−323

CASE 419

STYLE 3

SOT−723

CASE 631AA

STYLE 1

SOT−1123

CASE 524AA

STYLE 1

XX MG

G

1

XXX MG

G

XX MG

G

1

XX M

1

X M

XX M

1

PIN CONNECTIONS

Ähnliche Beschreibung - DTC124EM3

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
ON Semiconductor	MUN2112	146Kb / 12P	Digital Transistors (BRT) R1 = 22 k, R2 = 22 k September, 2012 ??Rev. 1
	MUN2115	146Kb / 12P	Digital Transistors (BRT) R1 = 10 k, R2 = k September, 2012 ??Rev. 1
	MUN2134	134Kb / 10P	Digital Transistors (BRT) R1 = 22 k, R2 = 47 k Septenber, 2012 ??Rev. 1
	MUN2137	138Kb / 11P	Digital Transistors (BRT) R1 = 47 k, R2 = 22 k September, 2012 ??Rev. 1
	MUN2234	135Kb / 10P	Digital Transistors (BRT) R1 = 22 k, R2 = 47 k August, 2012 ??Rev. 0
	MUN2237	137Kb / 11P	Digital Transistors (BRT) R1 = 47 k, R2 = 22 k August, 2012 ??Rev. 0
	MUN2134	142Kb / 11P	Digital Transistors (BRT) R1 = 22 k, R2 = 47 k October, 2013 ??Rev. 3
	MUN2215	149Kb / 12P	Digital Transistors (BRT) R1 = 10 k, R2 = k March, 2013 ??Rev. 1
	MUN2234	143Kb / 11P	Digital Transistors (BRT) R1 = 22 k, R2 = 47 k February, 2013 ??Rev. 1
	MUN2237	150Kb / 12P	Digital Transistors (BRT) R1 = 47 k, R2 = 22 k March, 2014 ??Rev. 3

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