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E93836A5Z-ST

32768-word

× 8-bit High Speed CMOS Static RAM

Description

The CXK5V8257BTM/BYM/BM is 262,144 bits

high speed CMOS static RAM organized as 32768-

words by 8 bits.

A polysilicon TFT cell technology realized extermely

low stand-by current and higher data retention stability.

Operating on a single 3.3V supply, directly LVTTL

compatible (All inputs and outputs).

And special feature are, low power consumption,

high speed and broad package line-up.

The CXK5V8257BTM/BYM/BM is a suitable RAM

for portable equipment with battery back up.

Features

• Single +3.3V supply: 3.3V ±0.3V

• Directly LVTTL compatible: All inputs and outputs

• Fast access time:

(Access time)

CXK5V8257BTM/BYM/BM

-70LL

70ns (Max.)

-10LL

100ns (Max.)

• Low standby current:

CXK5V8257BTM/BYM/BM

-70LL/10LL

3.5µA (Max.)

• Low power data retention: 2.0V (Min.)

• Available in many packages

CXK5V8257BTM/BYM 8mm

× 13.4mm 28 pin

TSOP Package

CXK5V8257BM

450mil 28 pin

SOP Package

Function

32768-word

× 8 bit static RAM

Structure

Silicon gate CMOS IC

Block Diagram

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

CXK5V8257BTM

28 pin TSOP (Plastic)

CXK5V8257BYM

28 pin TSOP (Plastic)

CXK5V8257BM

28 pin SOP (Plastic)

Memory

Matrix

512

× 512

I /O Gate

Column

Decoder

Row

Decoder

Buffer

Buffer

Buffer

I /O Buffer

GND

I /O1 I /O8

A14

A13

A12

A11

A9

A8

A7

A6

A5

OE

WE

CE

A4

A10

A3

A2

A1

A0

For the availability of this product, please contact the sales office.