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STPS3150 Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STPS3150
Bauteilbeschribung  Power Schottky rectifier
PDF  10 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS3150 Datenblatt(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS3150
2/10
Doc ID 9474 Rev 5
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.59 x IF(AV) + 0.023 IF
2
(RMS)
Table 2.
Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
150
V
IF(AV)
Average forward current
SMB
TL = 130 °C δ = 0.5
3
A
DO-201AD
TL = 140 °C δ = 0.5
SMB flat
TL = 150 °C δ = 0.5
IFSM
Surge non repetitive
forward current
SMB
tp = 10 ms sinusoidal
80
A
DO-201AD
100
SMB flat
80
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Operating junction temperature(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to lead
SMB flat
10
°C/W
SMB
20
Lead length = 10 mm
DO-201AD
15
Table 4.
Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
tp = 5 ms, δ < 2%
Reverse leakage
current
Tj = 25 °C
VR = VRRM
0.4
2.0
µA
Tj = 125 °C
0.6
2.0
mA
VF
(2)
2.
tp = 380 µs, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 3 A
0.78
0.82
V
Tj = 125 °C
0.63
0.67
Tj = 25 °C
IF = 6 A
0.85
0.89
Tj = 125 °C
0.70
0.75
dPtot
dTj
---------------
1
Rth j
a
–
()
--------------------------
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