STM32F303VB datasheet(80/133 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F302xx/STM32F303xx

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Doc ID 023353 Rev 5

6.3.8

Internal clock source characteristics

The parameters given in Table 42 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 22.

High-speed internal (HSI) RC oscillator

Figure 18.

HSI oscillator accuracy characterization results

The above curves are based on characterisation results, not tested in production

Table 42.

HSI oscillator characteristics(1)

VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

TRIM

HSI user trimming step

1(2)

Guaranteed by design, not tested in production.

DuCy(HSI)

Duty cycle

45(2)

-55(2)

ACCHSI

Accuracy of the HSI

oscillator (factory

calibrated)

TA = –40 to 105 °C

–3.8(3)

Data based on characterization results, not tested in production.

-4.6(3)

TA = –10 to 85 °C

–2.9(3)

-2.9(3)

TA = 0 to 70 °C

TA = 25 °C

–1

tsu(HSI)

HSI oscillator startup

time

1(2)

-2(2)

µs

IDD(HSI)

HSI oscillator power

consumption

100(3)

µA

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