2

Electrical Specifications

1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.

2. Pre-assembly into package performance verified 100% on wafer.

3. This final package part performance is verified by a functional test correlated to actual performance at one or more

frequencies.

4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may

be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)

matching.

5. The Gain at P1dB tested at 13, 14.5 and 16 GHz guaranteed with measurement accuracy +/-1dB for Gain, +/-1.2dB for

P1dB at 13 GHz and +/-1.5dB for P1dB at 14.5 GHz and 16 GHz.

6. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies.

Table 1. RF Electrical Characteristics

TA=25°C, Vd=5.0V, Idq=0.6mA, Vg= +0.5V, Zo=50 Ω

13GHz

14.5GHz

16GHz

Parameter

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Unit

Comment

Small Signal Gain, Gain

24

26

30

22

26

28

24

26

30

dB

Output Power at 1dBGain Compression, P1dB

27

29

26

29

25

29

dBm

Output Power at 3dBGain Compression, P3dB

30

30

30

dBm

Output Third Order Intercept Point, OIP3;

Point Δf= 2 MHz; Pout = +10 dBm, SCL

36

36

36

dBm

Min Reverse Isolation, Isolation

45

45

45

dB

Input Return Loss, Rlin

6

6

6

dB

Output Return Loss, RLout

8

8

8

dB

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal

Resistance at backside temperature (Tb) = 25°C calculated from measured data.

Description

Min.

Typical

Max.

Unit

Comments

Drain Supply Current, Id

600

mA

Vd = 5V, Vg set for typical Id(q) Typical

Gate Supply Voltage, Vg

0.5

V

Id(q) = 600mA