3

Table 3. Thermal Properties

Parameter

Test Conditions

Value

Thermal Resistance (channel to backside),

jc

Ambient operational temperature TA = 25°C

jc = 17 °C/W

Channel Temperature, Tch

Tch = 136 °C

Note:

1. Assume SnPb soldering to an evaluation RF board at 85°C base plate temperatures. Worst case for the channel temperature is under the quiescent

operation. At saturated output power, DC power consumption rises to 5 W with 1.43 W RF power delivered to load. Power dissipation is 3.57 W and

the temperature rise in the channel is 33.6°C. In this condition, the base plate temperature must be remained below 94.3°C to maintain maximum

operating channel temperature below 155°C.

Absolute Minimum and Maximum Ratings

Table 4. Minimum and Maximum Ratings

Description

Min.

Max.

Unit

Comments

Drain Supply Voltage, Vd

6

V

Gate Supply Voltage, Vg

1

V

8W

23

dBm

CW

+150

°C

Storage Case Temperature, Tstg

-65

+150

°C

Maximum Assembly Temperature, Tmax

260

°C

30 second maximum

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.

3. When operate at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced.

4. These ratings apply to each individual FET

5. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be

maintained at the lowest possible levels.