UPD5756T6N datasheet(8/17 Pages) RENESAS

Teilenummer	UPD5756T6N

Bauteilbeschribung	SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function

PDF	17 Pages

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Hersteller	RENESAS [Renesas Technology Corp]

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μPD5756T6N

R09DS0026EJ0100 Rev.1.00

Page 8 of 15

Oct 04, 2011

ISOLATION vs. FREQUENCY

Frequency f (MHz)

VCC = Vcont = 3.3 V

–20

–10

010

VCC = Vcont = 3.3 V

f = 500 MHz

–10

–20

OUTPUT POWER vs. INPUT POWER

Input Power Pin (dBm)

VCC = Vcont

–5

–10

–15

–20

–25

–30

500

1 000

1 500

VCC = 3.1 V

3.3 V

3.5 V

ISOLATION vs. FREQUENCY

Frequency f (MHz)

–5

–10

–15

–20

–25

–30

500

1 000

1 500

TA = –40

°C

+25

°C

+85

°C

Frequency f (MHz)

K FACTOR vs. FREQUENCY

1 000

500

1 500

VCC = Vcont

VCC = 3.3 V

3.5 V

3.1 V

Frequency f (MHz)

K FACTOR vs. FREQUENCY

1 000

500

1 500

TA = +85

°C

+25

°C

–40

°C

VCC = Vcont = 3.3 V

–20

–10

010

VCC = Vcont = 3.3 V

f = 500 MHz

POWER GAIN vs. INPUT POWER

Input Power Pin (dBm)

Remark The graphs indicate nominal characteristics.

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