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UPD5756T6N Datenblatt(PDF) 2 Page - Renesas Technology Corp

Teilenummer UPD5756T6N
Bauteilbeschribung  SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function
PDF  17 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD5756T6N Datenblatt(HTML) 2 Page - Renesas Technology Corp

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μPD5756T6N
R09DS0026EJ0100 Rev.1.00
Page 2 of 15
Oct 04, 2011
PIN CONNECTIONS, MARKING AND INTERNAL BLOCK DIAGRAM
(Top View)
(Top View)
6
5
4
1
2
3
1
2
3
6
5
4
(Bottom View)
1
2
3
6
5
4
Bias
Control
Remark Exposed pad : GND
Pin No
Pin Name
1
Vcont
2
GND
3
INPUT
4
OUTPUT
5
Load
6
VCC
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25
°C
4.0
V
Mode Control Voltage
Vcont
TA = +25
°C
4.0
V
Total Power Dissipation
Ptot
TA = +85
°C
Note
300
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Input Power
Pin
TA = +25
°C,
ZS = ZL = 75
Ω
+15
dBm
Note: Mounted on double-sided copper-clad 50
× 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Supply Voltage
VCC
3.1
3.3
3.5
V
Mode Control Voltage (H)
Vcont (H)
1.0
－
VCC
V
Mode Control Voltage (L)
Vcont (L)
−0.1
－
0.4
V
Operating Frequency
f
40
－
1 000
MHz
Operating Ambient Temperature
TA
−40
+25
+85
°C
Input Power (LNA-mode)
Note
Pin
－
－
0
dBm
Input Power (Bypass-mode) Note
Pin
－
－
+10
dBm
Note: TA = +25
°C, ZS = ZL = 75
Ω
ELECTRICAL CHARACTERISTICS 1 (DC Characteristics)
(TA = +25
°C, VCC = 3.3 V, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current 1
ICC1
Vcont = 3.3 V, No Signal (LNA-mode)
16
25
34
mA
Circuit Current 2
ICC2
Vcont = 0 V, No Signal (Bypass-mode)
–
0.01
1
μA
Mode Control Current 1
Icont1
Vcont = 3.3 V, No Signal (LNA-mode)
–
50
100
μA
Mode Control Current 2
Icont2
Vcont = 0 V, No Signal (Bypass-mode)
–
0.01
1
μA



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