89358 datasheet(1/2 Pages) IXYS

Teilenummer	89358

Bauteilbeschribung	High Voltage IGBT with Diode

PDF	2 Pages

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Hersteller	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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V

CES

= 1700

V

I

C25

=

26

A

V

CE(sat)

=

5.2

V

t

fi(typ)

=

50 ns

IXGR 32N170AH1

G = Gate,

C = Collector,

E = Emitter

Features

Electrically Isolated tab

High current handling capability

MOS Gate turn-on

- drive simplicity

Rugged NPT structure

Molding epoxies meet UL 94 V-0

flammability classification

Applications

Capacitor discharge & pulser circuits

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

DS99233(11/04)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

min.

typ.

max.

BV

CES

I

C

= 1mA, V

GE = 0 V

1700

V

GE(th)

I

C

= 250

µA, V

CE = VGE

3.0

5.0

V

I

CES

V

CE = 0.8 • VCES

500

µA

V

GE = 0 V

Note 1

T

J = 125°C8

mA

I

GES

V

CE = 0 V, VGE = ±20 V

±100

nA

V

CE(sat)

I

C

= I

C90, VGE = 15 V

4.2

5.2

V

T

J = 125°C

4.8

V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

1700

V

CGR

T

J

= 25

°C to 150°C; R

GE = 1 MΩ

1700

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C26

A

I

C90

T

C = 90°C17

A

I

F90

14

A

I

CM

T

C = 25°C, 1 ms

200

A

SSOA

V

GE = 15 V, TVJ = 125°C, RG = 5Ω

I

CM = 70

A

(RBSOA)

Clamped inductive load

@ 0.8 V

CES

t

SC

T

J = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω

10

µs

P

C

T

C = 25°C

200

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

F

C

Mounting force with clamp

22...130/5...30

N/lb

V

ISOL

50/60 Hz, 1 minute

2500

~V

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

Weight

5g

High Voltage

IGBT with Diode

Advance Technical Information

Electrically Isolated Tab

ISOLATED TAB

E

G

C

ISOPLUS247 (IXGR)

E153432

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