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STP10N60M2 Datenblatt(PDF) 7 Page - STMicroelectronics

Teilenummer STP10N60M2
Bauteilbeschribung  N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK
PDF  24 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP10N60M2 Datenblatt(HTML) 7 Page - STMicroelectronics

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
Figure 9. Static drain-source on-resistance
Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage
vs. temperature
Figure 12. Normalized on-resistance vs
temperature
Figure 13. Source-drain diode forward
characteristics
VGS
6
4
2
0
0
Qg(nC)
(V)
2
8
10
VDD=480V
300
200
100
0
400
VDS
4
500
VDS
(V)
ID=7.5A
6
8
10
12
12
AM15825v1
RDS(on)
0.56
0.55
0.54
0.53
2
ID(A)
(
Ω)
1
3
0.57
4
5
VGS=10V
0.58
6
7
AM15826v1
C
10
1
0.1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
100
1000
AM15827v1
VGS(th)
0.8
0.7
TJ(°C)
(norm)
-50
0.9
-25
50
100
0
25
75
125
1.0
1.1
ID=250 µA
AM15828v1
RDS(on)
1.3
1.1
0.9
0.7
TJ(°C)
(norm)
0.5
-50
-25
0
25
ID=3 A
50
75
100
125
1.5
1.7
1.9
2.1
2.3
2.5
AM15829v1
VSD
0
2
ISD(A)
(V)
1
5
3
4
0
0.2
0.4
0.6
TJ=-50°C
TJ=150°C
TJ=25°C
0.8
6
7
1
1.2
1.4
AM15830v1



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