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STP10N60M2 Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STP10N60M2
Bauteilbeschribung  N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK
PDF  24 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP10N60M2 Datenblatt(HTML) 5 Page - STMicroelectronics

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
7.5
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
30
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 7.5 A, V
GS
= 0
-
1.6
V
t
rr
Reverse recovery time
I
SD
= 7.5 A, di/dt = 100 A/μs
V
DD
= 60 V (see
Figure 18)
-
270
ns
Q
rr
Reverse recovery charge
-
2
μC
I
RRM
Reverse recovery current
-
14.4
A
t
rr
Reverse recovery time
I
SD
= 7.5 A, di/dt = 100 A/μs
V
DD
= 60 V, T
j
= 150 °C
(see
Figure 18)
-
376
ns
Q
rr
Reverse recovery charge
-
2.8
μC
I
RRM
Reverse recovery current
-
15
A



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