AM29LV128ML93RPCI datasheet(3/65 Pages) AMD

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DATASHEET

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 25270

Rev: C Amendment/2

Issue Date: September 9, 2003

Refer to AMD’s Website (www.amd.com) for the latest information.

Am29LV128MH/L

128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit

™ 3.0 Volt-only

Uniform Sector Flash Memory with VersatileI/O

™ Control

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

■ Single power supply operation

— 3 volt read, erase, and program operations

■ VersatileI/O

™ control

— Device generates data output voltages and tolerates

data input voltages on the CE# and DQ

inputs/outputs as determined by the voltage on the

IO pin; operates from 1.65 to 3.6 V

■ Manufactured on 0.23 µm MirrorBit process

technology

■ SecSi

™ (Secured Silicon) Sector region

— 128-word/256-byte sector for permanent, secure

identification through an 8-word/16-byte random

Electronic Serial Number, accessible through a

command sequence

— May be programmed and locked at the factory or by

the customer

■ Flexible sector architecture

— Two hundred fifty-six 32 Kword (64 Kbyte) sectors

■ Compatibility with JEDEC standards

— Provides pinout and software compatibility for

single-power supply flash, and superior inadvertent

write protection

■ Minimum 100,000 erase cycle guarantee per sector

■ 20-year data retention at 125

°C

PERFORMANCE CHARACTERISTICS

■ High performance

— 90 ns access time

— 25 ns page read times

— 0.5 s typical sector erase time

— 15 s typical effective write buffer word programming

time: 16-word/32-byte write buffer reduces overall

programming time for multiple-word updates

— 4-word/8-byte page read buffer

— 16-word/32-byte write buffer

■ Low power consumption (typical values at 3.0 V, 5

MHz)

— 13 mA typical active read current

— 50 mA typical erase/program current

— 1 µA typical standby mode current

■ Package options

— 56-pin TSOP

— 64-ball Fortified BGA

SOFTWARE & HARDWARE FEATURES

■ Software features

— Program Suspend & Resume: read other sectors

before programming operation is completed

— Erase Suspend & Resume: read/program other

sectors before an erase operation is completed

— Data# polling & toggle bits provide status

— Unlock Bypass Program command reduces overall

multiple-word or byte programming time

— CFI (Common Flash Interface) compliant: allows host

system to identify and accommodate multiple flash

devices

■ Hardware features

— Sector Group Protection: hardware-level method of

preventing write operations within a sector group

— Temporary Sector Group Unprotect: V

ID-level method

of changing code in locked sector groups

— WP#/ACC input accelerates programming time

(when high voltage is applied) for greater throughput

during system production. Protects first or last sector

regardless of sector protection settings

— Hardware reset input (RESET#) resets device

— Ready/Busy# output (RY/BY#) detects program or

erase cycle completion

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