| Datenblatt-Suchmaschine für elektronische Bauteile |
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AM29LV128ML93RPCI Datenblatt(PDF) 49 Page - Advanced Micro Devices |
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AM29LV128ML93RPCI Datenblatt(HTML) 49 Page - Advanced Micro Devices |
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49 / 65 page ![]() September 9, 2003 Am29LV128MH/L 47 DA T A SH EET AC CHARACTERISTICS Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 3. For 1–16 words/1–32 bytes programmed. 4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation 5. Byte/Word programming specification is based upon a single word/byte programming operation not utilizing the write buffer. 6. AC Specifications listed are tested with V IO = VCC. Contact AMD for information on AC operation with VIO ≠ V CC. Parameter Speed Options JEDEC Std. Description 93R 103, 103R 113, 113R 123, 123R Unit t AVAV t WC Write Cycle Time (Note 1) Min 90 100 110 120 ns t AVWL t AS Address Setup Time Min 0 ns t ASO Address Setup Time to OE# low during toggle bit polling Min 15 ns t WLAX t AH Address Hold Time Min 45 ns t AHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns t DVWH t DS Data Setup Time Min 45 ns t WHDX t DH Data Hold Time Min 0 ns t OEPH Output Enable High during toggle bit polling Min 20 ns t GHWL t GHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t ELWL t CS CE# Setup Time Min 0 ns t WHEH t CH CE# Hold Time Min 0 ns t WLWH t WP Write Pulse Width Min 35 ns t WHDL t WPH Write Pulse Width High Min 30 ns t WHWH1 t WHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 240 µs Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 7.5 µs Per Word Typ 15 µs Accelerated Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 6.25 µs Per Word Typ 12.5 µs Single Byte Word Program Operation (Note 2, 5) Byte Typ 60 µs Word Typ 60 µs Accelerated Single Byte Word Programming Operation (Note 2, 5) Byte Typ 54 µs Word Typ 54 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec t VHH V HH Rise and Fall Time (Note 1) Min 250 ns t VCS V CC Setup Time (Note 1) Min 50 µs t BUSY Erase/Program Valid to RY/BY# Delay Min 90 ns |
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