PIC12F510 datasheet(88/124 Pages) MICROCHIP

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PIC12F510/16F506

DS41268D-page 86

13.1

DC Characteristics: PIC12F510/16F506 (Industrial)

DC Characteristics

Standard Operating Conditions (unless otherwise specified)

Operating Temperature 40

°C ≤ TA ≤ +85°C (industrial)

Param

No.

Sym

Characteristic

Min

Typ(1)

Max

Units

Conditions

D001

VDD

Supply Voltage

2.0

5.5

See Figure 14-1

D002

VDR

RAM Data Retention Voltage(2)

—

1.5*

—

Device in Sleep mode

D003

VPOR

VDD Start Voltage to ensure

Power-on Reset

—Vss

—

See Section 10.4 “Power-on

Reset (POR)” for details

D004

SVDD

VDD Rise Rate to ensure

Power-on Reset

0.05*

—

V/ms See Section 10.4 “Power-on

Reset (POR)” for details

D010

IDD

Supply Current(3,4)

—

175

0.625

275

1.1

μA

FOSC = 4 MHz, VDD = 2.0V

FOSC = 4 MHz, VDD = 5.0V

—

250

1.0

450

1.5

μA

FOSC = 8 MHz, VDD = 2.0V

FOSC = 8 MHz, VDD = 5.0V

—1.4

2.0

FOSC = 20 MHz, VDD = 5.0V

—

μA

FOSC = 32 kHz, VDD = 2.0V

FOSC = 32 kHz, VDD = 5.0V

D020

IPD

Power-down Current(5)

—

0.1

0.35

1.2

2.4

μA

VDD = 2.0V

VDD = 5.0V

D022

IWDT

WDT Current(5)

—

1.0

7.0

3.0

16.0

μA

VDD = 2.0V

VDD = 5.0V

D023

ICMP

Comparator Current(5)

—

μA

VDD = 2.0V (per comparator)

VDD = 5.0V (per comparator)

D022

ICVREF CVREF Current(5)

—

125

μA

VDD = 2.0V (high range)

VDD = 5.0V (high range)

D023

IFVR

Internal 0.6V Fixed Voltage

Reference Current(5)

—

175

120

205

μA

VDD = 2.0V (0.6V reference and

1 comparator enabled)

VDD = 5.0V (0.6V reference and

1 comparator enabled)

D024

ΔIAD

A/D Conversion Current(5)

—

120

150

μA2.0V

—

200

250

μA5.0V

These parameters are characterized but not tested.

Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25

°C. This data is for design

guidance only and is not tested.

2: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.

3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus

loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on

the current consumption.

4: The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VSS, T0CKI = VDD, MCLR = VDD;

WDT enabled/disabled as specified.

5: For standby current measurements, the conditions are the same as IDD, except that the device is in Sleep

mode. If a module current is listed, the current is for that specific module enabled and the device in Sleep.

6: Does not include current through REXT. The current through the resistor can be estimated by the formula:

I = VDD/2REXT (mA) with REXT in k

Ω.

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