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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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PIC24F16KA102T-E Datenblatt(PDF) 229 Page - Microchip Technology |
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PIC24F16KA102T-E Datenblatt(HTML) 229 Page - Microchip Technology |
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229 / 278 page  2008-2011 Microchip Technology Inc. DS39927C-page 229 PIC24F16KA102 FAMILY TABLE 29-11: DC CHARACTERISTICS: PROGRAM MEMORY DC CHARACTERISTICS Standard Operating Conditions: 1.8V to 3.6V (unless otherwise stated) Operating temperature -40°C TA +85°C for Industrial -40°C TA +125°C for Extended Param No. Sym Characteristic Min Typ(1) Max Units Conditions Program Flash Memory D130 EP Cell Endurance 10,000(2) —— E/W D131 VPR VDD for Read VMIN —3.6 V VMIN = Minimum operating voltage D133A TIW Self-Timed Write Cycle Time — 2 — ms D134 TRETD Characteristic Retention 40 — — Year Provided no other specifications are violated D135 IDDP Supply Current During Programming —10 — mA Note 1: Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. 2: Self-write and block erase. TABLE 29-12: DC CHARACTERISTICS: DATA EEPROM MEMORY DC CHARACTERISTICS Standard Operating Conditions: 1.8V to 3.6V (unless otherwise stated) Operating temperature -40°C TA +85°C for Industrial -40°C TA +125°C for Extended Param No. Sym Characteristic Min Typ(1) Max Units Conditions Data EEPROM Memory D140 EPD Cell Endurance 100,000 — — E/W D141 VPRD VDD for Read VMIN —3.6 V VMIN = Minimum operating voltage D143A TIWD Self-Timed Write Cycle Time —4 — ms D143B TREF Number of Total Write/Erase Cycles Before Refresh — 10M — E/W D144 TRETDD Characteristic Retention 40 — — Year Provided no other specifications are violated D145 IDDPD Supply Current During Programming —7 — mA Note 1: Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. |
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