2SC3320

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R214-008.E



PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

500

V

Collector Emitter Voltage

400

V

400

V

Emitter Base Voltage

7

V

Collector Current

15

A

Base Current

5

A

Power Dissipation

80

W

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case

1.55

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Voltage

500

V

Collector Emitter Voltage

400

V

400

V

Emitter Base Voltage

7

V

Collector Emitter Saturation Voltage

1

V

Base Emitter Saturation Voltage

1.5

V

Collector Cut-off Current

1

mA

Emitter Cut-off Current

1

mA

DC Current Gain

10

45

Switching Time

0.5

μs

1.5

μs

0.15

μs



RANK

A

B

C

D

E

F

RANGE

10~15

15~20

20~25

25~30

30~35

35~45