| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3320 Datenblatt(PDF) 4 Page - Unisonic Technologies |
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2SC3320 Datenblatt(HTML) 4 Page - Unisonic Technologies |
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4 / 5 page ![]() 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R214-008.E TYPICAL CHARACTERISTICS 0.05 0.1 0.3 0.5 510 20 Base and Collector Saturation Voltage 0.01 0.03 0.05 0.1 0.3 0.5 1 3 TC=25℃IC=5IB VBE(SAT) VCE(SAT) 3 1 4 500 Safe Operating Area 0.03 0.1 TC=25℃ Single Pulse DC PW=1ms 300 100 50 30 10 5 3 1 0.05 0.3 0.5 1 3 5 10 30 1000 10 s Collector Current, IC (A) Collector Emitter voltage, VCE (V) |
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