13003BDG

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R223-017.b



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

800

V

Collector-Emitter Voltage

450

V

Emitter-Base Voltage

9

V

Continuous Collector Current

1.5

A

°C)

TO-251

10

W

TO-126

20

W

TO-92

1

W

Junction Temperature

150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

TO-251

95

°C/W

TO-126

107

TO-92

150

Junction to Case

TO-251

13

°C/W

TO-126

7.5

TO-92

100



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

800

V

Collector-Emitter Breakdown Voltage

450

V

Emitter-Base Breakdown Voltage

9

V

Collector Cut-Off Current

0.1

mA

Collector-Emitter Cut-Off Current

0.1

mA

Emitter-Base Cut-Off Current

0.1

mA

DC Current Gain (Note)

20

40

0.75

0.8

Collector-Emitter Saturation Voltage (Note)

0.18

0.8

V

Base-Emitter Saturation Voltage (Note)

0.9

1.5

V

Storage Time

2

5

μs

Rise Time

1

μs

Fall Time

1

μs

Transition Frequency

5

MHz

Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%.