UNISONIC TECHNOLOGIES CO., LTD

13003BDG

Preliminary

NPN SILICON TRANSISTOR

www.unisonic.com.tw

1 of 4

Copyright © 2014 Unisonic Technologies Co., Ltd

QW-R223-017.b

NPN SILICON BIPOLAR

TRANSISTORS FOR LOW

FREQUENCY AMPLIFICATION



DESCRIPTION

The UTC 13003BDG is a silicon NPN power switching transistor; it

uses UTC’s advanced technology to provide customers high

collector-base breakdown voltage, low reverse leakage current and

high reliability, etc.

The UTC 13003BDG is suitable for electronic ballast power switch

circuit and the compact electronic energy-saving light.



FEATURES

* High collector-base breakdown voltage

* Low reverse leakage current

* High reliability



EQUIVALENT CIRCUIT



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen Free

1

2

3

13003BDGL-TM3-T

13003BDGP-TM3-T

TO-251

B

C

E

Tube

13003BDGL-T60-K

13003BDGP-T60-K

TO-126

B

C

E

Bulk

13003BDGL-T92-B

13003BDGP-T92-B

TO-92

B

C

E

Tape Box

13003BDGL-T92-K

13003BDGP-T92-K

TO-92

B

C

E

Bulk

13003BDGL-T92-R

13003BDGP-T92-R

TO-92

B

C

E

Tape Reel

Note: Pin Assignment: B: Base

C: Collector

E: Emitter

(1) T: Tube, B: Bluk, K: Bulk, R: Tape Reel

(2) TM3: TO-251, T60: TO-126, T92: TO-92

(3) L: Lead Free, P: Halogen Free

13003BDGL-TM3-T

(1)Packing Type

(2)Package Type

(3)Lead Free