©

1993

DATA SHEET

SILICON TRANSISTOR

Document No. P10385EJ2V0DS00 (2nd edition)

(Previous No. TD-2399)

Date Published July 1995 P

Printed in Japan

2SC5006

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from

VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which

is an NEC proprietary fabrication technique.

FEATURES

•

Low Voltage Use.

•

•

•

Low NF

•

•

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC5006

50 pcs./Unit

2SC5006-T1

3 kpcs./Reel

* Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs.

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

100

mA

Total Power Dissipation

125

mW

Junction Temperature

150

˚ C

Storage Temperature

–60 to +150

˚ C

1.6 ± 0.1

0.8 ± 0.1

2

1

3

PACKAGE DIMENSIONS

in millimeters

1. Emitter

2. Base

3. Collector

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation side

of the tape.