2SC5006 datasheet(2/10 Pages) NEC

Teilenummer	2SC5006

Bauteilbeschribung	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

PDF	10 Pages

Scroll/Zoom	100%

Hersteller	NEC [NEC]

Direct Link	http://www.nec.com/

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2 / 10 page

2SC5006

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

1.0

µAVCB = 10 V, IE = 0

Emitter Cutoff Current

IEBO

1.0

µAVEB = 1 V, IC = 0

DC Current Gain

hFE

160

VCE = 3 V, IC = 7 mA*1

Gain Bandwidth Product

3.0

4.5

GHz

VCE = 3 V, IC = 7 mA, f = 1 GHz

Feed-Back Capacitance

Cre

0.7

1.5

VCB = 3 V, IE = 0, f = 1 MHz*2

Insertion Power Gain

|S21e|2

7.0

9.0

VCE = 3 V, IC = 7 mA, f = 1 GHz

Noise Figure

1.2

2.5

VCE = 3 V, IC = 7 mA, f = 1 GHz

*1 Pulse Measurement PW

≤ 350

µs, Duty Cycle ≤ 2 %

*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance

bridge.

hFE Classification

RANK

Marking

hFE

80 to 160

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