HM5259165B datasheet(18/63 Pages) ELPIDA

Teilenummer	HM5259165B

Bauteilbeschribung	512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 횞 16-bit 횞 4-bank/16-Mword 횞 8-bit 횞 4-bank /32-Mword 횞 4-bit 횞 4-bank PC/133, PC/100 SDRAM

PDF	63 Pages

Scroll/Zoom	100%

Hersteller	ELPIDA [Elpida Memory]

Direct Link	http://www.elpida.com/en

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18 / 63 page

HM5259165B/HM5259805B/HM5259405B-75/A6

Data Sheet E0118H10

From READ with AUTO-PRECHARGE state, command operation

To [DESL], [NOP]: These commands continue read operations until the burst operation is completed, and

the SDRAM then enters precharge mode.

To [ACTV]: This command makes other banks bank active. (However, an interval of t

RRD is required.)

Attempting to make the currently active bank active results in an illegal command.

From WRITE state, command operation

To [DESL], [NOP]: These commands continue write operations until the burst operation is completed.

To [READ], [READ A]: These commands stop a burst and start a read cycle.

To [WRIT], [WRIT A]: These commands stop a burst and start the next write cycle.

To [ACTV]: This command makes the other bank active. (However, an interval of t

RRD is required.)

Attempting to make the currently active bank active results in an illegal command.

To [PRE], [PALL]: These commands stop burst write and the SDRAM then enters precharge mode.

From WRITE with AUTO-PRECHARGE state, command operation

To [DESL], [NOP]: These commands continue write operations until the burst is completed, and the

synchronous DRAM enters precharge mode.

To [ACTV]: This command makes the other bank active. (However, an interval of t

RRD is required.)

Attempting to make the currently active bank active results in an illegal command.

From REFRESH state, command operation

To [DESL], [NOP]: After an auto-refresh cycle (after t

RC), the SDRAM automatically enters the IDLE state.

HM5259165B Datenblatt(PDF) 18 Page - Elpida Memory