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HM5259165B Datenblatt(PDF) 29 Page - Elpida Memory |
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HM5259165B Datenblatt(HTML) 29 Page - Elpida Memory |
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29 / 63 page ![]() HM5259165B/HM5259805B/HM5259405B-75/A6 Data Sheet E0118H10 29 Read command to Write command interval: 1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank as the preceding read command, the write command can be performed after an interval of no less than 1 clock. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z before data input. READ to WRITE Command Interval (1) CLK Command Dout in B2 in B3 READ WRIT in B0 in B1 High-Z Din CL=2 CL=3 DQM, DQMU /DQML Burst Length = 4 Burst write READ to WRITE Command Interval (2) CLK Command Dout READ WRIT Din CL=2 CL=3 DQM, DQMU/DQML High-Z 2 clock High-Z 2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bank- active command. 3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1 cycle, provided that the other bank is in the bank-active state. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z before data input. |
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