2SJ448 datasheet(4/8 Pages) NEC

Teilenummer	2SJ448

Bauteilbeschribung	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

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2SJ448

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

VGS - Gate to Source Voltage - V

–5

DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT

GATE TO SOURCE CUTOFF VOLTAGE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

ID - Drain Current - A

2.0

–0.1

VDS = –10 V

Pulsed

–1.0

1.0

100

–10

–100

1.0

3.0

–10

–15

Pulsed

4.0

–1.0

–10

Pulsed

6.0

–2.0

VDS = –10 V

ID = –1 mA

–4.0

–6.0

–8.0

–50

100

150

0.1

2.0

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

PW - Pulse Width - s

0.001

0.01

0.1

100

1 000

1 m

10 m

100 m

100

1 000

100

Single Pulse

Rth(ch-c) = 4.17 ˚C/W

–0.1

VGS = –10 V

µµ

Rth(ch-a) = 62.5 ˚C/W

TA = –25 ˚C

25 ˚C

75 ˚C

125 ˚C

ID =

–4 A

–2 A

–0.8 A

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